Search results for "scattering [pp]"
showing 10 items of 39 documents
High-sensitivity narrow-band CSRR-based Microwave Sensor for Monitoring Glucose Level
2022
In this paper, a high-sensitivity narrow-band microwave sensor based on a complementary split-ring resonator (CSRR) to detect glucose concentrations in an aqueous solution is presented. The sensor consists of three CSRR cells engraved on the bottom level of a 59 mm x 20 mm x 0.8 mm FR4 (εr=4.3) dielectric substrate with a sensing area of 36 x 20 mm2. The cells operate over the 2.3 - 2.4 GHz band and are powered by a 50 Ω microstrip waveguide at the bottom of the substrate. A sensitivity analysis, starting from an optimization of the thickness of the glass layer added to the cells to avoid short circuits between the sample solution and the CSRRs rings, is performed. The sensitivity analysis …
The Factorization Method for Electrical Impedance Tomography in the Half-Space
2008
We consider the inverse problem of electrical impedance tomography in a conducting half-space, given electrostatic measurements on its boundary, i.e., a hyperplane. We first provide a rigorous weak analysis of the corresponding forward problem and then develop a numerical algorithm to solve an associated inverse problem. This inverse problem consists of the reconstruction of certain inclusions within the half-space which have a different conductivity than the background. To solve the inverse problem we employ the so-called factorization method of Kirsch, which so far has only been considered for the impedance tomography problem in bounded domains. Our analysis of the forward problem makes u…
Performance of ATLAS tracking detector
2012
The track and vertex reconstruction algorithms of the ATLAS Inner Detector have demonstrated excellent performance in the early data from the LHC. However, the rapidly increas- ing number of interactions per bunch crossing introduces new challenges both in computational aspects and physics performance. The combination of both silicon and gas based detectors provides high precision impact parameter and momentum measurement of charged particles, with high efficiency and small fake rate. Vertex reconstruction is used to identify with high efficiency the hard scattering process and to measure the amount of pile-up interactions, both aspects are cru- cial for many physics analyses. The performan…
Modeling of low-noise microwave HEMTs for CAD-oriented applications
1993
The simultaneous determination of noise, gain and scattering parameters through a computer-driven noise figure measuring system allowed the rapid and accurate characterization of several samples of low noise HEMTs of the same family. From the measured parameters an equivalent circuit model representing the behavior of the typical device is extracted by means of a decomposition approach. Comparison between the model performance and the set of measured parameters of all devices are reported for the FHR 02FH (by Fujitsu). The modeling procedure is mainly oriented to the CAD of (M)MIC low noise wideband amplifiers. © 1993 John Wiley & Sons, Inc.
Complex, energy-independent, local potential reproducing an absorptive phase shift and a bound state
1994
The triton binding energy, and the partly real and partly complex neutron-deuteron doublet channel elastic scattering phase shifts, calculated by means of the exact three-body theory, are used as input in the fixed-[ital l] inverse scattering theory of Marchenko. The local potentials obtained hereby are independent of energy, and complex. Their strong imaginary part reflects the strong absorption in the doublet channel arising from the opening of the deuteron breakup channel. For total orbital angular momentum [ital l] different from zero the potentials are unique, reproducing the input phase shift in the whole energy region. For [ital l]=0 where there exists, in addition, a bound state we …
Microwave characterization and modeling of packaged HEMTs by a direct extraction procedure at cryogenic temperatures
2004
In the present work we employ a direct extraction procedure to determine small signal equivalent circuit of microwave GaAs FETs by means of scattering (S-) parameter measurements down to cryogenic temperatures. The direct extraction procedure was tested on packaged AlGaAs/InGaAs HEMTs and good agreement between the simulated and measured S-parameters was obtained at different bias and temperature conditions. We employed a properly designed cryogenic set-up operating in our laboratory that allows to perform DC and RF characterization down to 30 K.
TEMPERATURE DEPENDENT NOISY MODELS OF PSEUDOMORPHIC HEMTs
1994
From a complete characterization in terms of noise and scattering parameters carried out at room temperature in the 8–16 GHz frequency range, the noisy small‐signal model of a pseudomotphic HEMT series has been extracted. The transistor scattering parameters have been subsequently measured at lower temperatures (down to −50 °C) by placing the device text fixture in a thermo‐controlled chamber. The model effectiveness has then been tested by determining the circuit element values at the different temperatures and by observing the model noise performance.
Fixed angle inverse scattering in the presence of a Riemannian metric
2020
We consider a fixed angle inverse scattering problem in the presence of a known Riemannian metric. First, assuming a no caustics condition, we study the direct problem by utilizing the progressing wave expansion. Under a symmetry assumption on the metric, we obtain uniqueness and stability results in the inverse scattering problem for a potential with data generated by two incident waves from opposite directions. Further, similar results are given using one measurement provided the potential also satisfies a symmetry assumption. This work extends the results of [23,24] from the Euclidean case to certain Riemannian metrics.
Temperature Dependence of pHEMT-Based LNA Performance for VSAT Applications
1994
From a complete characterization in terms of noise and scattering parameters carried out at room temperature in the 8-16 GHz frequency range, the noisy small-signal model of a pseudomorphic HEMT series has been extracted. The transistor scattering parameters have been subsequently measured at lower temperatures (down to -50 °C) by placing the device text fixture in a thermo-controlled chamber. An accurate noisy model has then been extracted by determining the circuit element values at the different temperatures. The trade-off performance of a pHemt-based LNA for VSAT receiver system applications has been investigated vs. frequency and temperature.
Reference-Plane Invariant Method for Measuring Electromagnetic Parameters of Materials
2010
This paper presents a simple and effective wideband method for the determination of material properties, such as the complex index of refraction and the complex permittivity and permeability. The method is explicit (non-iterative) and reference-plane invariant: it uses a certain combination of scattering parameters in conjunction with group-velocity data. This technique can be used to characterize both dielectric and magnetic materials. The proposed method is verified experimentally within a frequency range between 2 to 18 GHz on polytetrafluoroethylene and polyvinylchloride samples. A comprehensive error and stability analysis reveals that, similar to other methods based on transmission/re…